1)total impulse,总冲量2)momentum,total impulse,总冲量<火>3)Pulsed total dose,脉冲总剂量4)momentum,动量,动力,总冲量5)over-all impulse-weight ratio,总冲量与总重量之比<火>6)pulse total dose effects,脉冲总剂量效应
用法例句
Pulsed total dose effect test technique and damage laws study;
脉冲总剂量效应测试技术及其损伤规律研究
The computational model of MOS Devices on time-dependent response of pulse total dose effects on MOS Devices is set up in the paper,including short-term recovery due to hole transport,the long-term recovery due to trapped hole anneal and the long-term buildup of interface traps.